elektronische bauelemente SCS202NF 80 v, 300 ma plastic-encapsulated, dual series chips small signal switching diode 01-april-2009 rev. b page 1 of 2 rohs compliant product a suffix of ?-c? specifies halogen and lead free features z ultra high speed switching z high reliability z suitable for high packaging density layout z fast reverse recovery time : t rr = 1.5ns (typ.) z construction: silicon epitaxial planar packaging information z four types of packaging are available z weight: 0.0078 g (approx.) marking code n , a3 absolute maximum ratings (each diode) parameter symbol ratings unit peak reverse voltage v rm 80 v dc reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current 1 s i surge 4 a total power dissipation p d 200 mw junction, storage temperature t j , t stg +150, -55 ~ +150 c electrical characteristics (at ta = 25 c unless otherwise specified) (each diode) parameter symbol min. typ. max. unit test conditions forward voltage v f - - 1.2 v i f = 100 ma reverse voltage leakage current i r - - 0.1 a v r = 70v diode capacitance c t - - 3.5 pf v r = 6 v, f = 1 mhz reverse recovery time t rr - - 4.0 ns v r = 6 v, i f = 5 ma notes: 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sot-323 top view a l c b d g h j f k e 1 2 3 1 2 3 millimete r millimete r ref. min. max. ref. min. max. a 2.00 2.20 f 0.20 0.40 b 2.15 2.45 g - - c 1.15 1.35 h 0.525 ref. d 0.90 1.10 j 0.08 0.15 e 1.20 1.40
elektronische bauelemente SCS202NF 80 v, 300 ma plastic-encapsulated, dual series chips small signal switching diode 01-april-2009 rev. b page 2 of 2 characteristic curves SCS202NF 0 0 125 100 75 50 25 25 50 75 100 125 150 ambient temperature :ta (oc) power dissipation : p d / p d max.(%) fig.1 power attenuation curve 0 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.4 0.6 0.8 1.0 1.2 0oc 30oc ta=85oc 50oc 25oc 1.4 1.6 forward current : i f ( ma) forward voltage : v f ( v) fig.3 forward characteristics reverse current : i r ( na) reverse voltage : v r ( v) fig.4 reverse characteristics 0.01 100 1000 10 0.1 1 10 20 30 40 80 70 60 50 0 ta = 100 c 75 c 50 c 25 c 25 c 0 c 0 0 4 2 2 4 6 8 10 12 14 16 f=1mhz capacitance between terminals : c t ( pf) reverse voltage : v r ( v) 18 20 fig.5 capacitance between terminals characteristics 0 0 10 9 8 7 6 5 4 3 2 1 10 9 8 7 6 5 4 3 2 1 v r = 6v reverse recovery time : t rr ( ns) forward current : i f ( ma) fig.2 reverse recovery time pulse generator output 50 sampling oscilloscope 50 0.01 f 100ns input d.u.t. i r 0.1i r t rr output 0 5 fig.6 reverse recovery time (t rr ) measurement circuit
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